Details

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BUY G20N60C3D https://www.utsource.net/itm/p/12608504.html

Parameter	Symbol	Value	Unit
Maximum Drain-Source Voltage	VDS(max)	600	V
Maximum Gate-Source Voltage	VGS(max)	卤20	V
Maximum Drain Current (Continuous)	ID(max)	20	A
Maximum Drain Current (Pulsed)	IDM(max)	80	A
Maximum Power Dissipation	PD(max)	180	W
Junction Temperature Range	TJ	-55 to +175	掳C
Storage Temperature Range	TSTG	-55 to +150	掳C
Total Gate Charge	QG	140	nC
Input Capacitance	Ciss	5000	pF
Output Capacitance	Coss	1500	pF
Reverse Transfer Capacitance	Crss	1100	pF
On-State Resistance	RDS(on)	0.18	惟
Threshold Voltage	VGS(th)	2.0 to 4.0	V

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage the maximum power dissipation.
   • Handle with care to avoid damage to the gate, which is sensitive to electrostatic discharge (ESD).

2. Biasing:

   • Apply the gate-source voltage (VGS) within the specified range of 卤20V.
   • Ensure the drain-source voltage (VDS) does not exceed 600V.

3. Current Handling:

   • Continuous drain current (ID) should not exceed 20A.
   • Pulsed drain current (IDM) can go up to 80A but should be within the thermal limits of the device.

4. Temperature Management:

   • Operate the device within the junction temperature range of -55掳C to +175掳C.
   • Store the device within the temperature range of -55掳C to +150掳C.

5. Capacitance and Charge:

   • Account for the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) in your circuit design to ensure stable operation.
   • The total gate charge (QG) should be considered when designing the gate drive circuit to minimize switching losses.

6. On-State Operation:

   • The on-state resistance (RDS(on)) is 0.18惟, which affects the power dissipation during conduction.
   • The threshold voltage (VGS(th)) ranges from 2.0V to 4.0V, so ensure the gate voltage is sufficient to fully turn on the MOSFET.

7. Safety and Compliance:

   • Follow all safety guidelines and compliance standards relevant to your application.
   • Ensure that the device is used within its absolute maximum ratings to prevent damage or failure.

(For reference only)