Details

---

BUY TIP122. https://www.utsource.net/itm/p/12608528.html

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCE	-	60	-	V
Emitter-Base Voltage	VEB	-	5.5	-	V
Collector-Base Voltage	VCB	-	60	-	V
Continuous Collector Current	IC	-	5	-	A
Peak Collector Current	IC(peak)	-	10	-	A
Power Dissipation	PT	-	65	-	W
Junction Temperature	TJ	-20	-	150	掳C
Storage Temperature	TSTG	-65	-	150	掳C
Thermal Resistance, Junction to Case	R胃JC	-	1.5	-	掳C/W

Instructions for Using TIP122:

1. Mounting:

   • Ensure proper heat sinking if operating at high power levels.
   • Use a thermal compound between the transistor and the heatsink for better thermal conductivity.

2. Biasing:

   • The TIP122 is a Darlington pair NPN transistor, which means it has a higher current gain (h_FE) compared to single transistors.
   • Apply a base current (I_B) that is sufficient to fully saturate the transistor when it needs to conduct the maximum collector current (I_C).

3. Protection:

   • Use a base resistor to limit the base current and prevent damage to the transistor.
   • Consider adding a flyback diode across inductive loads to protect against voltage spikes.

4. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table.
   • Monitor the junction temperature to ensure it remains within safe limits.

5. Storage:

   • Store the transistor in a dry, cool place to avoid moisture and temperature-related damage.

6. Testing:

   • Use a multimeter to check the continuity and resistance between the pins before installation.
   • Test the transistor in a controlled environment to ensure it meets the required specifications.

(For reference only)