Details

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BUY M27C512-45XF1 https://www.utsource.net/itm/p/12608530.html

Parameter	Description	Value
Device Type	EPROM (Erasable Programmable ROM)	M27C512-45XF1
Memory Size	Total memory capacity	64 Kbits (8K x 8)
Voltage - Supply	Operating voltage range	Vcc = 4.5V to 5.5V
Temperature Range	Operating temperature range	0掳C to +70掳C
Access Time	Maximum access time	45ns
Organization	Memory organization	8K x 8
Package	Type of package	28-PDIP, 28-SOIC
Erase Method	Method for erasing the chip	UV Light (30 minutes minimum)
Programming Voltage	Voltage required for programming	Vpp = 12.5V 卤 0.5V
Write Cycle	Time required for writing a byte	4ms max
Endurance	Number of write/erase cycles	1,000 cycles min
Data Retention	Minimum data retention period	10 years

Instructions for Use:

1. Power Supply: Ensure that the supply voltage (Vcc) is within the specified range of 4.5V to 5.5V.
2. Programming: Apply the correct programming voltage (Vpp = 12.5V 卤 0.5V) during the write cycle. The maximum write cycle time is 4ms per byte.
3. Erase: To erase the contents, expose the device to UV light for a minimum of 30 minutes.
4. Operating Temperature: Operate the device within the temperature range of 0掳C to +70掳C to ensure reliable performance.
5. Handling Care: Handle with care to avoid damage to the pins and package. Follow anti-static precautions.
6. Endurance and Data Retention: The device can endure at least 1,000 write/erase cycles and retains data for a minimum of 10 years under proper storage conditions.

(For reference only)