BF979S

BF979S


Specifications
SKU
12608538
Details

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Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - 30 - V
Emitter-Collector Voltage VECS - 30 - V
Base-Emitter Voltage VBE -1.5 - - V
Collector Current IC - 200 - mA
Base Current IB - 20 - mA
Power Dissipation PTOT - 625 - mW
Storage Temperature Range TSTG -65 - 150 掳C
Operating Temperature Range TA -40 - 85 掳C
Transition Frequency fT - 150 - MHz
DC Current Gain (hFE) hFE 100 300 600 -

Instructions for Using BF979S:

  1. Handling Precautions:

    • Handle the BF979S with care to avoid static damage.
    • Use proper ESD (Electrostatic Discharge) protection when handling the device.
  2. Mounting:

    • Ensure that the device is mounted on a suitable PCB with appropriate thermal management.
    • Avoid excessive mechanical stress on the leads during soldering.
  3. Soldering:

    • Use a temperature-controlled soldering iron.
    • Soldering temperature should not exceed 300掳C.
    • Soldering time should be kept to a minimum, typically less than 3 seconds per joint.
  4. Biasing:

    • Ensure that the base current (IB) is sufficient to keep the transistor in the desired operating region (saturation or active).
    • Use appropriate biasing circuits to maintain stable operation over temperature and supply voltage variations.
  5. Heat Dissipation:

    • If high power dissipation is expected, use a heatsink or ensure adequate PCB copper area for heat spreading.
    • Monitor the junction temperature to ensure it does not exceed the maximum rated value.
  6. Storage:

    • Store the BF979S in a dry, cool place.
    • Protect from moisture and extreme temperatures.
  7. Testing:

    • Use a multimeter or a transistor tester to verify the functionality of the BF979S before installation.
    • Check for proper connections and continuity after soldering.
  8. Applications:

    • The BF979S is suitable for high-frequency switching and amplification applications.
    • It can be used in RF circuits, audio amplifiers, and other analog and digital circuits requiring high-speed performance.
(For reference only)

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