Details

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BUY M5117400D-60SJ https://www.utsource.net/itm/p/12608560.html

Parameter	Description
Part Number	M5117400D-60SJ
Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Configuration	N-Channel
Package Type	TO-220
VDS (Drain-Source Voltage)	60V
ID (Continuous Drain Current)	30A at 25°C, derated by 1.1A/°C above 25°C up to 70°C
RDS(on) (On-Resistance)	4.5 mΩ at VGS = 10V
VGS(th) (Gate Threshold Voltage)	2.0V ~ 4.0V
Power Dissipation	90W (at TA = 25°C)
Operating Temperature	-55°C to +150°C
Storage Temperature	-65°C to +175°C

Instructions for Use:

1. Handling Precautions:

   • The device is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection.

2. Mounting:

   • Ensure proper heat sinking when operating at high currents to maintain junction temperature within safe limits.
   • Follow the manufacturer’s guidelines for mounting torque and thermal interface materials.

3. Biasing:

   • Apply gate voltage carefully; exceeding the maximum VGS can damage the device.
   • For optimal performance, ensure VGS is within the specified range to achieve rated RDS(on).

4. Testing:

   • During testing and debugging, limit current and voltage to avoid overstress conditions.
   • Use pulsed testing methods if necessary to prevent overheating during evaluation.

5. Storage:

   • Store in a dry, cool place away from direct sunlight and corrosive environments.
   • Observe the storage temperature limits to preserve device integrity.

6. Applications:

   • Suitable for power switching applications such as motor control, power supplies, and automotive electronics.

(For reference only)