ADG508FBRNZ

ADG508FBRNZ


Specifications
Details

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Parameter Symbol Conditions Min Typ Max Unit
Supply Voltage VDD Operating -0.3 36 V
Input Off-State Leakage Current IOSL VGS = 卤15V, VDS = 卤50V 卤100 nA
On-State Resistance RON VGS = 卤12V, TA = 25掳C 18
Breakdown Voltage BV 卤50 V
Gate-Source Voltage VGS Operating -20 20 V
Drain-Source Voltage VDS Operating -50 50 V

Instructions for ADG508FBRNZ

  1. Power Supply: Ensure the supply voltage (VDD) is within the operating range of -0.3V to 36V.
  2. Input Protection: Be cautious of input off-state leakage current (IOSL), which should not exceed 卤100nA under specified conditions.
  3. Resistance Management: The on-state resistance (RON) is critical for performance and should be considered especially at a gate-source voltage (VGS) of 卤12V and ambient temperature (TA) of 25掳C.
  4. Voltage Limits: Do not exceed the breakdown voltage (BV) limits of 卤50V to prevent damage.
  5. Gate-Source Voltage Handling: Operate within the gate-source voltage (VGS) range of -20V to 20V.
  6. Drain-Source Voltage Monitoring: Maintain drain-source voltage (VDS) within the operational limits of -50V to 50V.

For detailed specifications and additional information, refer to the official datasheet provided by Analog Devices.

(For reference only)

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