D640S

D640S


Specifications
SKU
12608584
Details

BUY D640S https://www.utsource.net/itm/p/12608584.html

Parameter Symbol Min Typ Max Unit Description
Forward Voltage VF - 1.2 1.7 V @ IF=20mA Forward voltage at 20 mA forward current
Reverse Current IR - 100 - nA @ VR=5V Reverse leakage current at 5 V reverse voltage
Peak Forward Current IFM - - 100 mA Maximum peak forward current
Continuous Forward Current IF - - 30 mA Maximum continuous forward current
Reverse Breakdown Voltage VBR 5 - 7 V Reverse breakdown voltage
Operating Temperature Toper -40 - 85 掳C Operating temperature range
Storage Temperature Tstg -55 - 150 掳C Storage temperature range
Thermal Resistance Rth - 150 - K/W Junction to ambient thermal resistance

Instructions for Use:

  1. Forward Current (IF):

    • Ensure that the continuous forward current does not exceed 30 mA.
    • For pulse applications, do not exceed the peak forward current of 100 mA.
  2. Reverse Voltage (VR):

    • Do not apply a reverse voltage greater than 7 V to avoid damaging the diode.
  3. Temperature:

    • Operate the diode within the temperature range of -40掳C to 85掳C.
    • Store the diode within the temperature range of -55掳C to 150掳C.
  4. Mounting:

    • Ensure proper heat dissipation if operating near the maximum current limits.
    • Follow standard PCB mounting practices to ensure reliable performance.
  5. Handling:

    • Handle with care to avoid mechanical damage.
    • Use appropriate ESD protection to prevent damage from static electricity.
  6. Testing:

    • Test the diode using a multimeter or a dedicated diode tester to ensure it is functioning correctly before installation.
  7. Soldering:

    • Use a soldering iron with a temperature not exceeding 300掳C.
    • Solder the diode quickly to minimize thermal stress.
  8. Storage:

    • Store in a dry, cool place to prevent moisture damage.
    • Keep in original packaging until ready for use to protect from environmental factors.
(For reference only)

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