Details

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BUY B16100 https://www.utsource.net/itm/p/12608594.html

Parameter	Description	Value	Unit
Part Number	Device identifier	B16100	-
Type	Type of device	Bipolar Transistor	-
Collector-Emitter Voltage (Vce)	Maximum voltage between collector and emitter	80	V
Collector-Base Voltage (Vcb)	Maximum voltage between collector and base	80	V
Emitter-Base Voltage (Veb)	Maximum voltage between emitter and base	5	V
Continuous Collector Current (Ic)	Maximum continuous current through the collector	1.5	A
Power Dissipation (Ptot)	Total power dissipation	125	mW
Transition Frequency (ft)	Frequency at which gain is unity	300	MHz
Storage Temperature Range	Temperature range for storage	-55 to +150	掳C
Operating Temperature Range	Temperature range for operation	-55 to +150	掳C

Instructions:

1. Handling Precautions: Handle with care to avoid damage to leads and body. Use proper anti-static precautions.
2. Mounting: Ensure correct orientation during mounting to prevent electrical shorts or incorrect connections.
3. Heat Sinks: For applications requiring high current, consider using a heat sink to manage thermal dissipation.
4. Voltage Limits: Do not exceed the maximum voltages specified to prevent device failure.
5. Current Limits: Operate within the continuous collector current limits to avoid overheating.
6. Storage Conditions: Store in a dry, cool place within the specified temperature range to ensure longevity.
7. Soldering: Follow recommended soldering profiles to avoid thermal shock and potential damage to the device.

(For reference only)