Details

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BUY TPH8R903NL https://www.utsource.net/itm/p/12608601.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source On-Resistance	RDS(on)	-	8.5	-	m惟 @ VGS=10V, ID=4A	Resistance between drain and source when fully enhanced
Gate-Source Threshold Voltage	VGS(th)	1.0	1.5	2.0	V	Gate-source voltage required to start conducting drain current
Continuous Drain Current	ID	-	-	6.0	A	Maximum continuous current through the device
Pulse Drain Current	ID(pulse)	-	-	24	A	Peak pulse current through the device
Power Dissipation	PD	-	-	0.9	W	Maximum power dissipation
Junction Temperature	TJ	-55	-	150	掳C	Operating temperature range for the junction
Storage Temperature	TSTG	-55	-	150	掳C	Operating temperature range for storage

Instructions:

1. Handling: The TPH8R903NL is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection.
2. Mounting: Ensure proper heat sinking if operating near maximum current or power dissipation limits.
3. Voltage Limits: Do not exceed the maximum gate-source voltage or drain-source voltage as specified in the datasheet.
4. Operating Conditions: Ensure that the junction temperature does not exceed 150掳C to prevent thermal damage.
5. Testing: When testing the device, ensure that all parameters are within the specified limits to avoid damaging the component.

(For reference only)