Details

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BUY 2SB527 https://www.utsource.net/itm/p/12608619.html

Parameter	Symbol	Value	Unit	Conditions
Collector-Emitter Voltage	V(BR)CEO	80	V	IC = 10mA
Collector-Base Voltage	V(BR)CBO	80	V	IE = 0
Emitter-Base Voltage	V(BR)EBO	5	V	IC = 0
Collector Current	IC	200	mA
Base Current	IB	20	mA
Power Dissipation	PD	625	mW	Tc = 25掳C
Junction Temperature	TJ	150	掳C
Storage Temperature Range	TSTG	-55 to 150	掳C

Instructions for Use:

1. Mounting: Ensure the device is mounted on a suitable heatsink if operating near maximum power dissipation to maintain junction temperature within limits.
2. Biasing: Proper biasing of the base-emitter junction is essential to avoid exceeding the maximum base current and voltage ratings.
3. Handling: Handle with care to prevent damage from electrostatic discharge (ESD). Use proper ESD protection measures.
4. Operation: Operate within specified temperature ranges to ensure reliable performance and longevity.
5. Testing: During testing, do not exceed the maximum ratings provided in the table to prevent damage to the transistor.
6. Storage: Store in a cool, dry place within the specified storage temperature range to prevent degradation of performance characteristics.

(For reference only)