Details

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BUY 2SA1075. https://www.utsource.net/itm/p/12608620.html

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage	VCEO	60	V
Collector-Base Voltage	VCBO	60	V
Emitter-Base Voltage	VEBO	5	V
Collector Current	IC	1.5	A
Power Dissipation	PD	45	W
Transition Frequency	FT	200	MHz
Storage Temperature Range	Tstg	-55 to +150	掳C
Junction Temperature	TJ	-55 to +150	掳C

Instructions for Use:

1. Handling Precautions: Avoid exceeding the maximum ratings provided in the table. Handle with care to prevent static damage.
2. Mounting: Ensure proper heat dissipation if operating near the maximum power dissipation limit. Use appropriate heatsinks as necessary.
3. Soldering: Do not exceed a soldering temperature of 300掳C for more than 10 seconds per terminal. Allow adequate cooling between soldering operations.
4. Testing: When testing the device, ensure that all voltages and currents are within specified limits to avoid damaging the transistor.
5. Storage: Store in a dry environment within the temperature range specified to maintain device integrity.

(For reference only)