TLA-6T118LF-T

TLA-6T118LF-T


Specifications
Details

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Parameter Value Unit
Part Number TLA-6T118LF-T
Type MOSFET
Configuration N-Channel
Maximum Drain-Source Voltage (Vds) 600 V
Maximum Gate-Source Voltage (Vgs) 卤20 V
Continuous Drain Current (Id) 11.5 A
Power Dissipation (Pd) 145 W
Total Gate Charge (Qg) 37 nC
Input Capacitance (Ciss) 1790 pF
Output Capacitance (Coss) 210 pF
Reverse Transfer Capacitance (Crss) 130 pF
RDS(on) at VGS=10V 0.58
Operating Temperature Range -55 to +150 掳C
Package Type TO-247

Instructions for Use:

  1. Installation:

    • Ensure that the MOSFET is handled with care to prevent damage from electrostatic discharge (ESD).
    • Install in a well-ventilated area to ensure proper heat dissipation, especially when operating near the maximum power dissipation.
  2. Electrical Connections:

    • Connect the drain terminal to the high voltage side of your circuit.
    • Connect the source terminal to the low voltage side or ground.
    • Apply the gate voltage relative to the source to control the switching action of the MOSFET.
  3. Thermal Management:

    • Use a heatsink if operating continuously near the maximum current or power ratings.
    • Ensure adequate cooling to keep the junction temperature within the specified operating range.
  4. Gate Drive Considerations:

    • The gate requires a clean and stable voltage to switch the MOSFET on and off effectively.
    • Avoid exceeding the maximum gate-source voltage to prevent damage.
  5. Storage and Handling:

    • Store in a dry, cool place away from direct sunlight.
    • Handle with anti-static precautions to avoid damaging the sensitive components.
(For reference only)

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