Details

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BUY 2SD1069 https://www.utsource.net/itm/p/12608661.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	Vceo	IC = 0mA	-	-	80	V
Emitter-Collector Voltage	Veco	IC = 0mA	-	-	80	V
Collector Current	Icm	VCE = 20V	-	15	-	A
Power Dissipation	Ptot	Ta = 25掳C	-	-	65	W
Junction Temperature	Tj	-	-	-	150	掳C
Storage Temperature	Tstg	-	-55	-	150	掳C

Instructions for Use:

1. Mounting and Handling:

   • Handle the 2SD1069 with care to avoid mechanical damage.
   • Ensure proper heat sinking if operating near maximum power dissipation.

2. Electrical Connections:

   • Connect the collector, base, and emitter terminals correctly to avoid damaging the transistor.
   • Use appropriate wire gauges to handle the current levels specified.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table.
   • Operate within the recommended temperature range to ensure reliability and longevity.

4. Testing and Measurement:

   • When testing the device, use suitable test equipment that can provide stable voltages and currents.
   • Measure parameters under conditions similar to those specified in the parameter table for accurate results.

5. Storage:

   • Store in a dry, cool place away from direct sunlight and corrosive environments.
   • Follow anti-static precautions to prevent damage due to electrostatic discharge (ESD).

6. Application Considerations:

   • Review the application circuit thoroughly to ensure it matches the capabilities of the 2SD1069.
   • Consider thermal management solutions if operating at high power levels or in high ambient temperatures.

(For reference only)