Details

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BUY 2SC3858 https://www.utsource.net/itm/p/12608669.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	100	V	IC = 0, TA = 25掳C
Collector-Base Voltage	VCBO	-	-	120	V	IE = 0, TA = 25掳C
Emitter-Base Voltage	VEBO	-	-	6	V	IC = 0, TA = 25掳C
Collector Current	IC	-	150	-	mA	VCE = 10V
Base Current	IB	-	10	-	mA	VCE = 10V
DC Current Gain	hFE	20	100	400	-	IC = 150mA, VCE = 10V
Transition Frequency	fT	-	200	-	MHz	IC = 150mA, VCE = 10V
Storage Temperature Range	TSTG	-55	-	150	掳C	-
Operating Temperature Range	TA	-55	-	150	掳C	-

Instructions for Use:

1. Mounting:

   • Ensure the transistor is mounted on a heatsink if it will be operating at high power levels.
   • Use appropriate thermal paste to enhance heat dissipation.

2. Biasing:

   • Set the base current (I_B) to ensure the transistor operates within its safe operating area (SOA).
   • For linear applications, bias the transistor to avoid saturation and cutoff regions.

3. Protection:

   • Use a series resistor with the base to limit base current and protect the transistor from overcurrent.
   • Consider using a diode across the load to protect against inductive spikes in switching applications.

4. Storage:

   • Store the transistor in a dry, cool place to prevent damage from moisture and temperature extremes.
   • Handle the transistor with care to avoid static discharge, which can damage the device.

5. Testing:

   • Before installing the transistor in a circuit, test it using a multimeter or transistor tester to ensure it is functioning correctly.
   • Check for continuity between the leads and ensure there are no short circuits.

6. Safety:

   • Always follow safety guidelines when working with electrical components.
   • Disconnect power sources before making any connections or modifications to the circuit.

(For reference only)