Details

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BUY 2SD313.. https://www.utsource.net/itm/p/12608672.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Collector-Emitter Voltage	VCE	-	-	400	V
Emitter-Base Voltage	VEB	-5	-	5	V
Collector Current	IC	-	-	10	A
Base Current	IB	-	-	2	A
Power Dissipation	PT	-	-	125	W	TC = 25掳C
Storage Temperature Range	TSTG	-55	-	150	掳C
Operating Temperature Range	TA	-55	-	150	掳C
Transition Frequency	fT	-	200	-	MHz	IC = 1A, VCE = 10V
Collector-Emitter Saturation Voltage	VCE(sat)	-	1.2	-	V	IC = 1A, IB = 100mA
Base-Emitter Saturation Voltage	VBE(sat)	-	2.0	-	V	IC = 1A, IB = 100mA
Forward Current Transfer Ratio	hFE	20	70	150	-	IC = 1A, VCE = 10V

Instructions for Use:

1. Handling and Storage:

   • Store the device in a dry, cool place to avoid moisture damage.
   • Handle with care to prevent static discharge and physical damage.

2. Mounting:

   • Ensure proper heat sinking when operating at high power levels to maintain the junction temperature within safe limits.
   • Use recommended mounting torque for screws to avoid mechanical stress on the device.

3. Biasing:

   • Ensure that the base current (I_B) is sufficient to fully turn on the transistor, typically 1/10th of the collector current (I_C).
   • Avoid exceeding the maximum base current to prevent damage.

4. Operational Limits:

   • Do not exceed the maximum ratings for collector-emitter voltage (V_CE), emitter-base voltage (V_EB), collector current (I_C), and power dissipation (P_T).
   • Operate within the specified temperature ranges to ensure reliable performance.

5. Testing:

   • Use appropriate test equipment and procedures to measure parameters such as V_CE(sat), V_BE(sat), and h_FE.
   • Ensure that the test conditions match those specified in the parameter table.

6. Application Notes:

   • Refer to application notes and datasheets for detailed information on circuit design and troubleshooting.
   • Consider the thermal resistance and cooling requirements when designing circuits with this transistor.

(For reference only)