Details

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BUY JH-226 https://www.utsource.net/itm/p/12608678.html

Parameter	Description
Part Number	JH-226
Type	Phototransistor
Package	TO-18
Emission Wavelength	850 nm (Typical)
Forward Current (IF)	100 mA (Max)
Reverse Voltage (VR)	5 V (Max)
Collector-Emitter Voltage (VCE)	30 V (Max)
Collector Current (IC)	50 mA (Max)
Power Dissipation (Ptot)	150 mW (Max)
Operating Temperature Range	-40掳C to +85掳C
Storage Temperature Range	-40掳C to +100掳C
Rise Time (tr)	1 渭s (Typical)
Fall Time (tf)	1 渭s (Typical)
Sensitivity (CTR)	10% to 200% (Typical)

Instructions for Use:

1. Handling:

   • Handle with care to avoid damage to the leads and body.
   • Use proper ESD (Electrostatic Discharge) protection when handling.

2. Mounting:

   • Ensure the correct orientation of the device during mounting.
   • Soldering temperature should not exceed 260掳C for more than 10 seconds.
   • Avoid applying excessive force to the leads during soldering.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table.
   • Ensure the operating temperature is within the specified range to avoid thermal damage.
   • For optimal performance, keep the device away from sources of electromagnetic interference.

4. Testing:

   • Use a multimeter or appropriate testing equipment to verify the functionality of the phototransistor.
   • Test the device under controlled conditions to ensure accurate readings.

5. Storage:

   • Store in a dry, cool place to prevent moisture damage.
   • Keep in original packaging until ready for use to protect from static and physical damage.

6. Applications:

   • Suitable for use in optical sensors, proximity detectors, and other light-sensitive applications.

(For reference only)