Details

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BUY IRFS644B https://www.utsource.net/itm/p/12608700.html

Parameter	Symbol	Test Conditions	Min	Typical	Max	Unit
Drain-Source Voltage	VDS	-	-	100	-	V
Gate-Source Voltage	VGS	-	-	卤20	-	V
Continuous Drain Current (TC = 25掳C)	ID	-	-	18	-	A
Continuous Drain Current (TC = 75掳C)	ID	-	-	13	-	A
Pulse Drain Current (TC = 25掳C, tp = 10 ms, Duty Cycle = 1%)	ID(pulse)	-	-	45	-	A
Total Power Dissipation (TC = 25掳C)	PTOT	-	-	115	-	W
Junction Temperature	TJ	-	-	-	150	掳C
Storage Temperature Range	TSTG	-	-65	-	150	掳C
Gate Charge	QG	VGS = 10V, ID = 1A	-	45	-	nC
Input Capacitance	Ciss	VDS = 10V, f = 1 MHz	-	1140	-	pF
Output Capacitance	Coss	VDS = 10V, f = 1 MHz	-	110	-	pF
Reverse Transfer Capacitance	Crss	VDS = 10V, f = 1 MHz	-	19	-	pF
On-State Resistance (VGS = 10V, ID = 10A)	RDS(on)	-	-	0.018	-	惟
Threshold Voltage	VGS(th)	ID = 250 渭A	2.0	3.0	4.0	V

Instructions for Use:

1. Operating Conditions:

   • Ensure that the drain-source voltage (V_DS) does not exceed 100V.
   • The gate-source voltage (V_GS) should be within 卤20V to avoid damage.
   • The continuous drain current (I_D) at 25掳C should not exceed 18A, and at 75掳C, it should not exceed 13A.
   • For pulse applications, the pulse drain current (I_D(pulse)) can go up to 45A with a duty cycle of 1%.

2. Thermal Management:

   • The total power dissipation (P_TOT) at 25掳C should not exceed 115W.
   • The junction temperature (T_J) should be kept below 150掳C to ensure reliable operation.
   • Store the device in an environment with temperatures between -65掳C and 150掳C.

3. Electrical Characteristics:

   • The gate charge (Q_G) is typically 45 nC when V_GS = 10V and I_D = 1A.
   • The input capacitance (C_iss) is approximately 1140 pF at V_DS = 10V and f = 1 MHz.
   • The output capacitance (C_oss) is around 110 pF under the same conditions.
   • The reverse transfer capacitance (C_rss) is about 19 pF.

4. On-State Performance:

   • The on-state resistance (R_DS(on)) is typically 0.018 惟 when V_GS = 10V and I_D = 10A.
   • The threshold voltage (V_GS(th)) ranges from 2.0V to 4.0V, with a typical value of 3.0V.

5. Handling Precautions:

   • Handle the device with care to avoid electrostatic discharge (ESD) damage.
   • Use appropriate heat sinks or cooling solutions to manage thermal dissipation effectively.
   • Ensure proper mounting and soldering techniques to maintain electrical and mechanical integrity.

(For reference only)