Details

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BUY BTW69-200 https://www.utsource.net/itm/p/12608704.html

Parameter	Symbol	Value	Unit
Maximum Collector-Emitter Voltage	V(BR)CEO	200	V
Maximum Collector Current (Continuous)	IC	69	A
Maximum Collector Current (Pulse)	ICM	138	A
Maximum Emitter-Base Voltage	VEB	5	V
Maximum Base Current (Continuous)	IB	7	A
Maximum Power Dissipation	PD	1300	W
Junction Temperature Range	TJ	-55 to 150	掳C
Storage Temperature Range	TSTG	-55 to 150	掳C
Thermal Resistance, Junction to Case	R胃JC	0.4	K/W

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage the thermal resistance.
   • Handle with care to avoid mechanical damage to the leads and body.

2. Electrical Connections:

   • Connect the collector to the high-voltage side of the circuit.
   • Connect the emitter to the low-voltage side or ground.
   • Apply base current through the base terminal to control the transistor.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table.
   • Ensure that the junction temperature does not exceed 150掳C to prevent thermal runaway.

4. Storage:

   • Store in a dry, cool place within the temperature range specified.
   • Avoid exposure to corrosive environments.

5. Testing:

   • Use appropriate test equipment to verify the transistor parameters before installation.
   • Follow safety guidelines to prevent electrical shock and damage to the device.

6. Dissipation Management:

   • Use a heatsink to dissipate the power generated by the transistor, especially under high load conditions.
   • Calculate the required heatsink size based on the thermal resistance and power dissipation.

7. Soldering:

   • Use a soldering iron with a temperature no higher than 300掳C.
   • Solder quickly to avoid overheating the device.

8. Safety:

   • Always use appropriate personal protective equipment (PPE) when handling high-power devices.
   • Follow all relevant safety standards and guidelines.

(For reference only)