Details

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BUY FQP12P20 https://www.utsource.net/itm/p/12608706.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Drain-Source Voltage	VDS	-	-	200	V
Gate-Source Voltage	VGS	-20	-	20	V
Continuous Drain Current	ID	-	-	12	A	@ TA = 25掳C
Pulse Drain Current	ID(p)	-	-	36	A	@ TC = 25掳C, tp = 10 渭s, Duty Cycle = 1%
Total Power Dissipation	PTOT	-	-	100	W	@ TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C
Storage Temperature Range	TSTG	-65	-	150	掳C
Thermal Resistance, Junction to Case	R胃JC	-	-	0.83	掳C/W

Instructions for Use:

1. Handling:

   • Handle the FQP12P20 with care to avoid damage to the leads and the die.
   • Use proper ESD (Electrostatic Discharge) protection when handling to prevent damage from static electricity.

2. Mounting:

   • Ensure that the device is mounted on a heatsink if operating at high power levels to maintain junction temperature within safe limits.
   • Follow the recommended soldering profile to avoid thermal shock and ensure reliable solder joints.

3. Biasing:

   • Apply the gate-source voltage (V_GS) within the specified range to avoid damaging the gate oxide.
   • Ensure that the drain-source voltage (V_DS) does not exceed the maximum rating to prevent breakdown.

4. Operation:

   • Monitor the junction temperature (T_J) to ensure it does not exceed the maximum allowable temperature.
   • If operating in pulse mode, ensure that the pulse duration and duty cycle are within the specified limits to avoid overheating.

5. Storage:

   • Store the device in a dry, cool place within the specified storage temperature range to prevent degradation.

6. Testing:

   • Use appropriate test equipment and methods to verify the device parameters and functionality.
   • Refer to the datasheet for detailed testing procedures and recommended test conditions.

7. Safety:

   • Always follow safety guidelines and regulations when working with high voltages and currents.
   • Use protective equipment as necessary to prevent injury.

(For reference only)