Details

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BUY 2SC1625 https://www.utsource.net/itm/p/12608713.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	Vceo	Ic = 0	-	-	80	V
Collector-Base Voltage	Vcbo	Ib = 0	-	-	90	V
Emitter-Base Voltage	Vebo	Ie = 5mA	-	-	6	V
Collector Current	Ic	Vce = 30V	-	-	1	A
Base Current	Ib	Vce = 30V, Ic = 1A	-	-	0.1	A
DC Current Gain	hFE	Ic = 150mA	20	100	400	-
Transition Frequency	ft	Ic = 150mA	-	-	300	MHz
Power Dissipation	Ptot	Ta = 25掳C	-	-	625	mW
Junction Temperature	Tj		-	-	150	掳C

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper handling to avoid damage from electrostatic discharge (ESD).
   • Mount the transistor in a way that ensures adequate heat dissipation if operating near maximum power.

2. Biasing and Operation:

   • Operate within the specified voltage and current limits to prevent damage.
   • Use appropriate biasing circuits to ensure stable operation and prevent thermal runaway.

3. Storage and Packaging:

   • Store in a dry, cool place away from direct sunlight.
   • Follow anti-static precautions during storage and transport.

4. Testing:

   • When testing or measuring parameters, ensure that all conditions listed in the table are met for accurate results.
   • Use protective equipment and follow safety guidelines when conducting tests.

5. Application Notes:

   • Refer to application notes provided by the manufacturer for detailed circuit design recommendations.
   • For high-frequency applications, consider the transition frequency limitations.

6. Safety Precautions:

   • Do not exceed the maximum ratings as it can lead to device failure.
   • Ensure proper ventilation if operating at high temperatures or power levels.

(For reference only)