Details

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BUY CA3079 https://www.utsource.net/itm/p/12608747.html

Parameter	Description	Value
Type	Type of Device	N-channel MOSFET
V(DSS)	Drain-to-Source Voltage	60 V
R(DSON)	On-State Resistance	0.9 Ω
I(DS)	Continuous Drain Current	1 A
P(TOT)	Total Power Dissipation	450 mW
T(J)	Junction Temperature	-55°C to +150°C
Package	Package Type	TO-92

Instructions for CA3079:

1. Handling Precautions: The CA3079 is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures when handling.
2. Mounting: Ensure that the device is mounted on a suitable heatsink if operating at high power levels to maintain junction temperature within specified limits.
3. Biasing: Apply gate voltage carefully as excessive gate-source voltage can damage the device. Ensure the gate voltage does not exceed the maximum ratings.
4. Storage: Store in a dry, cool place away from direct sunlight and sources of heat.
5. Testing: When testing the device, ensure all connections are secure and correct to avoid damage or incorrect readings.
6. Application Notes: Refer to the manufacturer’s application notes for detailed information on circuit design and layout considerations.

(For reference only)