Details
BUY 6264BLS10L https://www.utsource.net/itm/p/12608751.html
| Parameter | Value |
|---|---|
| Part Number | 6264BLS10L |
| Description | 8K x 8 CMOS Static RAM |
| Package Type | 28-Pin PDIP (Plastic Dual In-Line Package) |
| Operating Voltage | 5V 卤 10% |
| Operating Temperature | -40掳C to +85掳C |
| Storage Temperature | -65掳C to +150掳C |
| Access Time | 150 ns (typical) |
| Data Retention | 20 years at 25掳C |
| Standby Current | 5 渭A (maximum) |
| Active Current | 25 mA (maximum) |
| Output Drive Capability | 10 LSTTL Loads (24 mA) |
| Pins | 28 |
| Pin Configuration | A0-A12: Address Inputs |
| D0-D7: Data Inputs/Outputs | |
| CE: Chip Enable (Low Active) | |
| OE: Output Enable (Low Active) | |
| WE: Write Enable (Low Active) | |
| VCC: Supply Voltage | |
| GND: Ground |
Instructions for Use:
Power Supply:
- Connect VCC to +5V and GND to ground.
- Ensure the power supply is stable and within the specified range.
Addressing:
- Apply the desired address to the A0-A12 pins to select the memory location.
Data Input/Output:
- Connect data lines D0-D7 to the system bus for data transfer.
Control Signals:
- CE (Chip Enable): Set to low to enable the device.
- OE (Output Enable): Set to low to enable data output from the selected memory location.
- WE (Write Enable): Set to low to write data to the selected memory location.
Timing Considerations:
- Ensure that the access time (150 ns typical) is respected to avoid data corruption.
- Use appropriate timing circuits or delays to manage the control signals.
Handling Precautions:
- Handle the device with care to avoid static damage.
- Store in a dry environment to prevent moisture damage.
Testing:
- Before integrating into a larger system, test the device using a simple read/write test to ensure it functions correctly.
End of Life:
- Dispose of the device according to local regulations for electronic waste.
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