Details

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BUY BF862,215 https://www.utsource.net/itm/p/12608755.html

Parameter	BF862	215
Type	N-Channel Power MOSFET	PNP Bipolar Transistor
Max Drain Current	30A (Continuous)	-
Max Collector Current	-	15A
Max Drain-Source Voltage	100V	-
Max Collector-Emitter Voltage	-	60V
Max Gate Source Voltage	卤20V	-
Max Power Dissipation	125W	65W
Junction Temperature Range	-55掳C to +150掳C	-55掳C to +150掳C
Package	TO-220	TO-220

Instructions:

For BF862:

1. Ensure the drain current does not exceed 30A continuously.
2. Do not apply more than 100V between the drain and source.
3. The gate-source voltage should be within 卤20V.
4. Keep the junction temperature within -55掳C to +150掳C.

For 215:

1. Ensure the collector current does not exceed 15A.
2. Do not apply more than 60V between the collector and emitter.
3. Keep the junction temperature within -55掳C to +150掳C.
4. Ensure power dissipation does not exceed 65W.

Note: Always refer to the specific datasheets for detailed specifications and application notes.

(For reference only)