Details

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BUY IXTQ36N30P https://www.utsource.net/itm/p/12608761.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	-	300	V
Gate-Source Voltage	VGS	-20	-	20	V
Continuous Drain Current	ID	-	36	-	A	TC = 25掳C
Continuous Drain Current	ID	-	27	-	A	TC = 100掳C
Pulse Drain Current	ID(peak)	-	108	-	A	tp = 10 渭s, IG = 10 A
Total Power Dissipation	PTOT	-	240	-	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Thermal Resistance, Junction to Case	R胃JC	-	0.5	-	掳C/W
Input Capacitance	Ciss	-	2900	-	pF	VGS = 15 V, f = 1 MHz
Output Capacitance	Coss	-	210	-	pF	VDS = 150 V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	180	-	pF	VDS = 150 V, VGS = 0 V, f = 1 MHz
Gate Charge	QG	-	110	-	nC	VGS = 15 V
Turn-on Delay Time	td(on)	-	55	-	ns	ID = 36 A, VGS = 15 V, RG = 2 惟
Rise Time	tr	-	70	-	ns	ID = 36 A, VGS = 15 V, RG = 2 惟
Turn-off Delay Time	td(off)	-	50	-	ns	ID = 36 A, VGS = 15 V, RG = 2 惟
Fall Time	tf	-	75	-	ns	ID = 36 A, VGS = 15 V, RG = 2 惟

Instructions for Use:

1. Handling and Storage:

   • Store the device in a dry, cool environment to prevent moisture damage.
   • Handle with care to avoid static discharge, which can damage the device.

2. Mounting:

   • Ensure proper heat sinking to manage thermal resistance and maintain the junction temperature within safe limits.
   • Use a thermal compound between the device and the heat sink to improve thermal conductivity.

3. Biasing:

   • Apply the gate-source voltage (V_GS) carefully to avoid exceeding the maximum ratings.
   • Use appropriate gate resistors to control the turn-on and turn-off times and reduce switching losses.

4. Operation:

   • Operate the device within the specified drain-source voltage (V_DS) and continuous drain current (I_D) limits.
   • Monitor the junction temperature (T_J) to ensure it does not exceed 175掳C.

5. Testing:

   • When testing the device, use the recommended test conditions to ensure accurate measurements.
   • Use a suitable test setup to avoid over-stressing the device.

6. Safety:

   • Always follow safety guidelines when working with high voltages and currents.
   • Ensure that the device is properly isolated from other circuits to prevent short circuits and damage.

By adhering to these parameters and instructions, you can ensure reliable and efficient operation of the IXTQ36N30P MOSFET.

(For reference only)