Details

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BUY BUZ76 https://www.utsource.net/itm/p/12608768.html

Parameter	Symbol	Value	Unit
Maximum Drain-Source Voltage	VDS(max)	100	V
Maximum Gate-Source Voltage	VGS(max)	卤20	V
Maximum Drain Current (TDS(on))	ID(max)	1.5	A
Maximum Power Dissipation	PTOT(max)	1.25	W
Junction Temperature Range	TJ	-55 to +150	掳C
Storage Temperature Range	TSTG	-65 to +150	掳C
Continuous Drain Current (TC = 25掳C)	ID	0.5	A
Gate Threshold Voltage	VGS(th)	1.0 to 2.5	V
On-State Resistance (RDS(on), VGS = 10V)	RDS(on)	5.0	惟

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings listed in the table.
   • Handle the BUZ76 with care to avoid static damage. Use ESD protection when handling.

2. Mounting:

   • Ensure proper heat dissipation if operating near the maximum power dissipation.
   • Use a heatsink if necessary, especially for continuous high-current applications.

3. Biasing:

   • Apply a gate-source voltage (V_GS) within the specified range to turn the device on or off.
   • For reliable operation, ensure the gate voltage is above the threshold voltage (V_GS(th)).

4. Temperature Considerations:

   • Monitor the junction temperature (T_J) to prevent overheating.
   • Ensure the ambient temperature remains within the storage temperature range (T_STG).

5. Testing:

   • When testing the device, use a current-limited power supply to avoid accidental overcurrent conditions.
   • Verify the on-state resistance (R_DS(on)) under typical operating conditions to ensure the device is functioning correctly.

6. Storage:

   • Store the device in a dry, cool place away from direct sunlight.
   • Keep the device in its original packaging until ready for use to protect against moisture and static damage.

(For reference only)