Details

---

BUY STP60NE10FP https://www.utsource.net/itm/p/12608774.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Collector-Emitter Voltage	VCE	-	-	100	V
Emitter-Collector Voltage	VEC	-	-	100	V
Collector-Base Voltage	VCB	-	-	100	V
Base-Emitter Voltage	VBE	-	-	7	V
Continuous Collector Current	IC	-	-	60	A
Continuous Base Current	IB	-	-	6	A
Power Dissipation (TC = 25掳C)	PTOT	-	-	125	W
Junction Temperature	TJ	-	-	175	掳C
Storage Temperature	TSTG	-55	-	175	掳C
Thermal Resistance, Junction to Case	RthJC	-	-	0.5	K/W
Total Gate Charge	QG	-	-	30	nC
Turn-on Delay Time	td(on)	-	-	50	ns
Rise Time	tr	-	-	50	ns
Turn-off Delay Time	td(off)	-	-	50	ns
Fall Time	tf	-	-	50	ns

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Use thermal paste between the device and heat sink for better thermal conductivity.

2. Biasing:

   • Apply base current (I_B) sufficient to ensure full saturation when operating in switching mode.
   • For linear applications, ensure the base-emitter voltage (V_BE) is within the specified range to avoid damage.

3. Protection:

   • Use appropriate snubber circuits to protect against voltage spikes during switching.
   • Implement overcurrent protection to prevent damage from excessive collector current (I_C).

4. Storage:

   • Store in a dry environment to prevent moisture damage.
   • Avoid exposure to extreme temperatures outside the storage temperature range.

5. Handling:

   • Handle with care to avoid mechanical stress on the leads and package.
   • Use anti-static precautions to prevent damage from electrostatic discharge (ESD).

6. Testing:

   • Use recommended test conditions to ensure accurate measurement of parameters.
   • Refer to the datasheet for detailed test circuit diagrams and procedures.

For more detailed information, refer to the official STMicroelectronics datasheet for the STP60NE10FP.

(For reference only)