Details

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BUY 10N80E https://www.utsource.net/itm/p/12608787.html

Parameter	Value	Unit
Type	N-Channel MOSFET	-
Voltage (Vds)	80	V
Current (Id)	10	A
Power Dissipation (Ptot)	26.5	W
Gate Charge (Qg)	49	nC
Input Capacitance (Ciss)	3700	pF
Output Capacitance (Coss)	1100	pF
Rds(on) at 10V	14	m惟

Instructions for Use:

1. Handling Precautions: The 10N80E is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD protection measures.
2. Mounting: Ensure proper heat sinking if operating near maximum power dissipation limits.
3. Operating Conditions:
   • Ensure the drain-source voltage (Vds) does not exceed 80V.
   • Do not exceed a continuous drain current (Id) of 10A.
4. Gate Drive: Apply gate voltages within the specified range to avoid damage and ensure reliable operation.
5. Storage: Store in a dry, cool environment away from direct sunlight.
6. Application Circuits: Refer to datasheet application notes for typical circuits and layout recommendations.

(For reference only)