2SK996

2SK996


Specifications
Details

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Parameter Symbol Min Typ Max Unit Conditions
Drain Current ID - 10 20 mA VGS = 0V, VDS = 15V
Gate Threshold Voltage VGS(th) 0.8 1.5 2.5 V ID = 1mA
Input Capacitance Ciss - 350 - pF f = 1MHz
Output Capacitance Coff - 4 - pF f = 1MHz
Transconductance Gfs 20 40 60 mS VGS = 4V, VDS = 15V, ID = 10mA
Maximum Drain-Source Voltage VDS(max) - - 30 V Continuous
Maximum Gate-Source Voltage VGS(max) - - 卤10 V Continuous
Maximum Power Dissipation PD(max) - - 250 mW Ta = 25掳C

Instructions for Use:

  1. Biasing and Operating Conditions:

    • Ensure the gate-source voltage (VGS) does not exceed 卤10V to avoid damage.
    • Operate within the specified drain current limits to prevent overheating.
  2. Handling Precautions:

    • The 2SK996 is sensitive to electrostatic discharge (ESD). Handle with ESD protection measures.
    • Avoid exceeding the maximum ratings as listed in the table to ensure reliable operation.
  3. Mounting and Assembly:

    • Mount on a suitable heat sink if operating near the power dissipation limit.
    • Follow manufacturer guidelines for soldering temperatures and times to avoid damage.
  4. Testing:

    • When testing the device, use the typical values provided as a reference for expected performance.
    • Measure input and output capacitances at 1 MHz for accurate characterization.
  5. Storage:

    • Store in a dry environment to prevent moisture damage.
    • Keep away from direct sunlight and extreme temperatures.
(For reference only)

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