Details

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BUY IKP20N60T K20T60 https://www.utsource.net/itm/p/12608833.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	V CES	-	-	600	V	Maximum voltage between collector and emitter
Collector Current	I C	-	-	20	A	Maximum continuous collector current
Power Dissipation	P TOT	-	-	180	W	Total power dissipation
Junction Temperature	T J	-20	-	175	掳C	Operating junction temperature range
Storage Temperature	T STG	-55	-	150	掳C	Storage temperature range
Gate Charge	Q G	-	49	-	nC	Total gate charge
Turn-on Delay Time	t d(on)	-	32	-	ns	Turn-on delay time
Rise Time	t r	-	35	-	ns	Rise time
Turn-off Delay Time	t d(off)	-	45	-	ns	Turn-off delay time
Fall Time	t f	-	65	-	ns	Fall time

Instructions for Use:

1. Handling Precautions: The IKP20N60T should be handled with care to avoid damage from electrostatic discharge (ESD). Use proper ESD protection equipment when handling.
2. Mounting: Ensure the device is mounted on a heatsink if operating near its maximum power dissipation limits to maintain safe operating temperatures.
3. Voltage and Current Limits: Do not exceed the specified maximum voltages and currents as listed in the parameter table to prevent device failure.
4. Temperature Monitoring: Regularly monitor the junction temperature to ensure it remains within the operational limits.
5. Gate Drive: Provide appropriate gate drive signals to minimize switching losses and ensure reliable operation. Refer to the typical values of gate charge and switching times for optimizing gate drive circuitry.
6. Storage Conditions: Store the device in a controlled environment that adheres to the storage temperature specifications to preserve device integrity.

(For reference only)