Details

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BUY MMFT70R380PTH https://www.utsource.net/itm/p/12608835.html

Parameter	Value	Unit
Device Type	MOSFET	-
Package Type	TO-220	-
Maximum Drain-to-Source Voltage (VDS)	700	V
Maximum Gate-to-Source Voltage (VGS)	卤20	V
Continuous Drain Current (ID)	38	A
Peak Pulse Drain Current (IDM)	150	A
Total Power Dissipation (PTOT)	150	W
Junction Temperature (TJ)	-55 to +175	掳C
Storage Temperature (TSTG)	-65 to +150	掳C
RDS(on) at VGS = 10V	4.5	m惟
Gate Charge (QG)	125	nC
Input Capacitance (Ciss)	1500	pF
Output Capacitance (Coss)	150	pF
Reverse Transfer Capacitance (Crss)	300	pF

Instructions for Use:

1. Handling and Storage:

   • Store the device in a dry environment to prevent moisture damage.
   • Handle the device with care to avoid mechanical stress on the leads and package.

2. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within the specified limits.
   • Use thermal compound between the device and the heatsink to improve thermal conductivity.

3. Electrical Connections:

   • Connect the drain, source, and gate terminals correctly to avoid short circuits.
   • Ensure that the gate voltage is within the specified range to prevent damage to the gate oxide.

4. Operational Conditions:

   • Do not exceed the maximum ratings for drain-to-source voltage, gate-to-source voltage, and continuous drain current.
   • Monitor the junction temperature to ensure it does not exceed the maximum allowable temperature.

5. Testing:

   • Use appropriate test equipment and methods to verify the device parameters.
   • Follow safety guidelines when testing high-voltage and high-current circuits.

6. Disposal:

   • Dispose of the device according to local environmental regulations.

(For reference only)