Details
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| Parameter | Description |
|---|---|
| Device | IR2010 High Voltage, High Speed MOS Gate Driver |
| Supply Voltage (Vcc) | 10V to 60V DC |
| Input Voltage (Vil, Vih) | Vil ≤ 0.8V, Vih ≥ 2.0V |
| Propagation Delay Time (tpd) | typ. 45ns (at VCC = 15V) |
| Pulse Width Distortion (PWD) | max. 15ns (at VCC = 15V) |
| Output Current (Ioh, Iol) | Ioh = -1A, Iol = 2A |
| Operating Temperature Range (Toperating) | -40°C to +125°C |
| Storage Temperature Range (Tstorage) | -65°C to +150°C |
| Package Type | SOIC-8 |
Instructions for Use:
Power Supply Connection: Connect the supply voltage (Vcc) between the VCC and COM pins. Ensure the voltage is within the specified range of 10V to 60V.
Input Signal Handling: Apply input signals to IN pin with low level (Vil) not exceeding 0.8V and high level (Vih) at least 2.0V for proper switching.
Output Configuration: The OUT pin can source or sink current up to the specified limits (Ioh = -1A, Iol = 2A). Connect this pin to the gate of the MOSFET being driven.
Timing Considerations: Be aware of the propagation delay time (tpd) and pulse width distortion (PWD) to ensure accurate timing in your application.
Thermal Management: Operate within the temperature range (-40°C to +125°C) to avoid thermal damage. Ensure adequate heat dissipation if operating near maximum temperatures.
Storage Conditions: When storing the device, keep it within the storage temperature range (-65°C to +150°C).
Handling Precautions: Follow standard ESD (Electrostatic Discharge) precautions when handling the component to prevent damage.
Mounting: Mount the device using standard soldering techniques suitable for SOIC-8 packages. Ensure good electrical connections and mechanical stability.
Testing: After assembly, test the circuit under typical operating conditions to verify functionality and performance.
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