Details

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BUY BZX85C16 https://www.utsource.net/itm/p/12608877.html

Parameter	Symbol	Min	Typ	Max	Unit
Reverse Breakdown Voltage	VR	-	16	-	V
Maximum Reverse Current	IR	-	5	-	mA
Forward Voltage	VF	0.9	-	1.1	V
Operating Temperature	Toper	-65	-	150	掳C
Storage Temperature	Tstg	-65	-	150	掳C
Power Dissipation	PD	-	400	-	mW
Junction Capacitance	CJ	-	400	-	pF

Instructions for Using BZX85C16:

1. Reverse Breakdown Voltage (VR):

   • The device is designed to operate at a reverse voltage up to 16V. Exceeding this voltage can cause permanent damage.

2. Maximum Reverse Current (IR):

   • Ensure that the reverse current does not exceed 5mA to avoid overheating and potential failure.

3. Forward Voltage (VF):

   • The forward voltage drop across the diode should be between 0.9V and 1.1V when conducting forward current.

4. Operating Temperature (Toper):

   • The device can operate within a temperature range of -65掳C to 150掳C. Ensure that the ambient temperature does not exceed these limits.

5. Storage Temperature (Tstg):

   • Store the device in an environment where the temperature ranges from -65掳C to 150掳C to prevent degradation.

6. Power Dissipation (PD):

   • The maximum power dissipation is 400mW. Ensure that the device is adequately heat-sinked if it will be operating near this limit to prevent thermal runaway.

7. Junction Capacitance (CJ):

   • The junction capacitance is approximately 400pF. This value should be considered in high-frequency applications to avoid unwanted effects.

8. Mounting:

   • Use appropriate mounting techniques to ensure good thermal contact with the heat sink or PCB. Avoid excessive mechanical stress on the leads.

9. Handling:

   • Handle the device with care to avoid static discharge, which can damage the sensitive components. Use ESD-safe tools and work surfaces.

10. Testing:

    • When testing the device, use a multimeter or other appropriate test equipment to verify the parameters. Ensure that the test conditions do not exceed the specified limits.

(For reference only)