Details

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BUY ADG904BRUZ-R https://www.utsource.net/itm/p/12608882.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Supply Voltage	VDD	-0.3		3.6	V
Input Voltage Range	VIN	-0.3		VDD+0.3	V
Output Voltage Swing	VOUT	-0.3		VDD+0.3	V
On Resistance	RON	1.5	2.8	4.5	惟	VDD = 3V, TA = 25掳C
Leakage Current	ILK		1	10	渭A	VDD = 3V, TA = 25掳C
Breakdown Voltage	BV	4			V
Power Dissipation	PD		70		mW	TA = 25掳C
Operating Temperature	TOPR	-40		85	掳C
Storage Temperature	TSTG	-65		150	掳C

Instructions for ADG904BRUZ-R

1. Power Supply Connection: Connect the supply voltage (VDD) within the specified range (-0.3V to 3.6V). Ensure that the input and output voltages do not exceed VDD + 0.3V or go below -0.3V.

2. Signal Handling: The device can handle signals within the input voltage range specified. Ensure all signal levels are within this range to avoid damage.

3. Thermal Management: Operate the device within the recommended operating temperature range (-40掳C to 85掳C). For storage, ensure temperatures do not exceed the storage temperature limits (-65掳C to 150掳C).

4. Power Dissipation: Keep the power dissipation under control, ideally not exceeding 70mW at room temperature (25掳C), to prevent overheating.

5. Handling Electrostatic Discharge (ESD) Sensitive Devices: Use proper ESD precautions when handling the device to prevent damage from static electricity.

6. Breakdown Voltage Consideration: Do not exceed the breakdown voltage of 4V to protect the integrity of the component.

7. On-Resistance Monitoring: Monitor the on-resistance, which varies with temperature and supply voltage. At VDD = 3V and TA = 25掳C, expect a typical value around 2.8惟, but it can range from 1.5惟 to 4.5惟.

8. Leakage Current Awareness: Be aware of leakage current, especially in low-power applications, as it can vary from 1渭A to 10渭A under standard conditions.

(For reference only)