Bc848A

Bc848A


Specifications
Details

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Parameter Symbol Min Typ Max Unit Description
Collector-Emitter Voltage VCEO - - 50 V Maximum voltage between collector and emitter with base open
Emitter-Base Voltage VEBO -5 - - V Maximum reverse voltage between emitter and base
Collector-Base Voltage VCBO - - 60 V Maximum voltage between collector and base with emitter open
Continuous Collector Current IC - - 0.1 A Maximum continuous current through the collector
Total Power Dissipation PT - - 310 mW Maximum power dissipation at T_A = 25掳C
Junction Temperature TJ -55 - 150 掳C Operating junction temperature range
Storage Temperature Range TSTG -65 - 150 掳C Temperature range for storage

Instructions:

  1. Mounting: Ensure proper heat sinking if operating near maximum power dissipation to maintain junction temperature within specified limits.
  2. Biasing: Carefully set bias voltages to avoid exceeding maximum ratings, especially for VCEO, VEBO, and VCBO.
  3. Current Handling: Do not exceed the maximum continuous collector current (IC) to prevent damage or overheating.
  4. Temperature Management: Monitor the junction temperature (TJ) to ensure it remains within the operational range. Avoid prolonged exposure to temperatures outside the specified storage range (TSTG).
  5. Handling Precautions: Use appropriate ESD protection when handling the device to prevent damage from static electricity.
(For reference only)

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