Details

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BUY 2SC4521F https://www.utsource.net/itm/p/12608892.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCE	-	-	100	V	-
Collector-Base Voltage	VCB	-	-	100	V	-
Emitter-Base Voltage	VEB	-2	-	6	V	-
Collector Current	IC	-	-	3	A	-
Base Current	IB	-	-	0.3	A	-
Power Dissipation	PT	-	-	30	W	TA = 25掳C
Junction Temperature	TJ	-	-	150	掳C	-
Storage Temperature	TSTG	-55	-	150	掳C	-
Transition Frequency	fT	-	120	-	MHz	IC = 150 mA, VCE = 10 V
DC Current Gain	hFE	30	100	300	-	IC = 150 mA, VCE = 10 V

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Use recommended mounting torque to avoid damage to the transistor.

2. Biasing:

   • Set base current (I_B) to ensure the transistor operates in the active region for linear applications.
   • For switching applications, ensure the transistor is driven into saturation by providing sufficient base current.

3. Power Dissipation:

   • Calculate power dissipation (P_D = V_CE * I_C) and ensure it does not exceed the maximum rated power dissipation.
   • Use appropriate cooling methods (e.g., heatsinks, fans) to manage thermal resistance.

4. Storage and Handling:

   • Store the transistor in a dry, cool place away from direct sunlight.
   • Handle with care to avoid mechanical stress and static discharge.

5. Electrical Connections:

   • Connect the collector, base, and emitter terminals correctly to avoid damage.
   • Use short leads to minimize parasitic inductance and capacitance.

6. Testing:

   • Test the transistor using a multimeter or a transistor tester to verify its parameters before installation.
   • Ensure the testing conditions match the specified operating conditions to get accurate results.

7. Safety:

   • Always follow safety guidelines when handling high voltages and currents.
   • Use protective equipment such as gloves and goggles when necessary.

(For reference only)