Details

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BUY 24N60DM2 https://www.utsource.net/itm/p/12608927.html

Parameter	Description	Value	Unit
Part Number	Device Part Number	24N60DM2	-
Type	Device Type	MOSFET	-
Configuration	Channel Configuration	N-Channel	-
VDS	Drain-Source Voltage	600	V
ID	Continuous Drain Current	24	A
PD	Total Power Dissipation	180	W
RDS(on)	On-State Resistance at 25掳C	0.09	惟
VGS(th)	Gate Threshold Voltage	3 to 5	V
Qg	Total Gate Charge	120	nC
EAS	Avalanche Energy	2.5	J
SOA	Safe Operating Area	Refer to Datasheet	-
Package	Device Package	TO-247	-

Instructions for Use:

1. Handling Precautions:

   • Handle with care to avoid damage to the device.
   • Use appropriate anti-static measures as the device is sensitive to ESD (Electrostatic Discharge).

2. Mounting:

   • Ensure proper heat sinking if operating near maximum power dissipation.
   • Follow manufacturer guidelines for mounting and soldering.

3. Biasing and Operation:

   • Ensure gate voltage does not exceed the rated VGS(max).
   • Operate within specified temperature range to prevent thermal runaway.

4. Testing:

   • Use recommended test circuits for accurate parameter measurement.
   • Avoid exceeding absolute maximum ratings during testing.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready for use to minimize exposure to static.

For detailed specifications and application notes, refer to the official datasheet provided by the manufacturer.

(For reference only)