Details

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BUY 2SC3346-Y https://www.utsource.net/itm/p/12608933.html

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage	Vceo	-	-	60	V
Collector-Base Voltage	Vcbo	-	-	75	V
Emitter-Base Voltage	Vebo	-	-	5	V
Collector Current	Ic	-	-	1.5	A
Base Current	Ib	-	-	0.15	A
DC Current Gain	hFE	10	50	200	-
Transition Frequency	ft	-	300	-	MHz
Power Dissipation	Ptot	-	-	625	mW
Junction Temperature	Tj	-20	-	150	掳C
Storage Temperature	Tstg	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • Handle the 2SC3346-Y with care to avoid mechanical damage.
   • Use appropriate anti-static measures to prevent electrostatic discharge (ESD) damage.

2. Mounting:

   • Ensure proper alignment of the transistor leads during soldering.
   • Soldering temperature should not exceed 300掳C, and the soldering time should be kept to a minimum to avoid thermal damage.

3. Biasing:

   • Ensure that the base current (Ib) is within the specified limits to avoid overdriving the transistor.
   • Use appropriate biasing circuits to maintain the transistor in the desired operating region (cut-off, active, or saturation).

4. Heat Dissipation:

   • If the transistor is expected to dissipate significant power, use a heatsink to maintain the junction temperature within the specified range.
   • Ensure adequate ventilation if the transistor is used in a confined space.

5. Testing:

   • Test the transistor using a multimeter or a dedicated transistor tester to verify its parameters before installation.
   • Check for any short circuits or open circuits in the leads.

6. Storage:

   • Store the 2SC3346-Y in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the transistors in their original packaging until ready for use to protect them from static electricity and physical damage.

(For reference only)