Details
BUY 06N03LA https://www.utsource.net/itm/p/12608947.html
| Parameter | Symbol | Min | Typical | Max | Unit | Notes |
|---|---|---|---|---|---|---|
| Breakdown Voltage | V(BR)DSS | - | 600 | - | V | @ I_D = 1 mA, T_A = 25掳C |
| Forward Voltage | V_F | - | 1.8 | - | V | @ I_D = 15 A, T_C = 25掳C |
| Continuous Drain Current | I_D | - | 15 | - | A | @ T_C = 25掳C |
| Pulse Drain Current | I_DM | - | 75 | - | A | @ T_C = 25掳C, t_P = 10 渭s |
| Gate-Source Voltage | V_GS | -20 | - | 20 | V | - |
| Input Capacitance | Ciss | - | 1400 | - | pF | @ V_DS = 400 V, f = 1 MHz |
| Output Capacitance | Coss | - | 250 | - | pF | @ V_DS = 400 V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | - | 350 | - | pF | @ V_DS = 400 V, f = 1 MHz |
| Total Gate Charge | Q_g | - | 110 | - | nC | @ V_DS = 400 V, V_GS = 15 V, I_D = 15 A |
| Turn-on Delay Time | t_d(on) | - | 15 | - | ns | @ V_DS = 400 V, V_GS = 15 V, I_D = 15 A, R_G = 3.3 惟 |
| Rise Time | t_r | - | 35 | - | ns | @ V_DS = 400 V, V_GS = 15 V, I_D = 15 A, R_G = 3.3 惟 |
| Turn-off Delay Time | t_d(off) | - | 25 | - | ns | @ V_DS = 400 V, V_GS = 15 V, I_D = 15 A, R_G = 3.3 惟 |
| Fall Time | t_f | - | 45 | - | ns | @ V_DS = 400 V, V_GS = 15 V, I_D = 15 A, R_G = 3.3 惟 |
| Thermal Resistance (Junction to Case) | R_thJC | - | 0.5 | - | 掳C/W | - |
| Junction Temperature | T_J | - | - | 150 | 掳C | - |
| Storage Temperature | T_STG | -55 | - | 150 | 掳C | - |
Instructions for Use:
Mounting and Handling:
- Ensure proper handling to avoid damage to the device.
- Mount the device on a heatsink if operating at high currents or temperatures.
Biasing:
- Apply the gate-source voltage (V_GS) within the specified range to ensure reliable operation.
- Use appropriate gate resistors (R_G) to control switching times and reduce EMI.
Thermal Management:
- Monitor the junction temperature (T_J) to prevent overheating.
- Use thermal paste between the device and heatsink to improve heat dissipation.
Overvoltage Protection:
- Implement overvoltage protection circuits to prevent damage from voltage spikes.
Current Limiting:
- Use current limiting techniques to protect the device from excessive drain current (I_D).
Storage:
- Store the device in a dry, cool environment to prevent moisture damage.
- Avoid exposure to extreme temperatures and humidity.
Testing:
- Test the device under controlled conditions to ensure it meets the required specifications.
- Use appropriate test equipment and procedures to avoid damaging the device.
Compliance:
- Ensure that the device complies with relevant safety and regulatory standards for your application.
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