Details

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BUY 2SA561-Y https://www.utsource.net/itm/p/12608954.html

Parameter	Symbol	Min	Typ	Max	Unit	Condition
Collector-Emitter Voltage	VCEO	-	-	80	V	IC = 0, T = 25掳C
Emitter-Collector Voltage	VECS	-	-	80	V	IB = 0, T = 25掳C
Base-Emitter Voltage	VBE	-	-	7	V	IC = 0, T = 25掳C
Collector Current	IC	-	-	15	A	T = 25掳C
Base Current	IB	-	-	3	A	T = 25掳C
Power Dissipation	PT	-	-	180	W	TC = 25掳C
Operating Temperature	TOP	-40	-	150	掳C	-
Storage Temperature	TSTG	-55	-	150	掳C	-

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings to prevent damage.
   • Use appropriate heat sinks when operating at high power levels.

2. Mounting:

   • Ensure proper thermal contact with the heat sink.
   • Tighten the mounting screws to the recommended torque to avoid mechanical stress.

3. Biasing:

   • Ensure the base-emitter voltage (V_BE) is within the specified range to avoid forward biasing the base-emitter junction.

4. Operating Conditions:

   • Operate within the specified temperature range to ensure reliable performance.
   • Monitor the junction temperature to prevent overheating.

5. Storage:

   • Store in a dry, cool place away from direct sunlight and extreme temperatures.

6. Testing:

   • Use a suitable test setup to verify the transistor parameters before installation in the final application.

7. Safety:

   • Follow all relevant safety guidelines and regulations when handling and testing the transistor.

(For reference only)