Details
BUY RGTH60TS65GC11 https://www.utsource.net/itm/p/12608965.html
| Parameter | Value |
|---|---|
| Part Number | RGTH60TS65GC11 |
| Type | MOSFET |
| Package | TO-247-3L |
| VDS (V) | 650 |
| RDS(on) (m惟) @ VGS=10V | 60 |
| ID (A) | 60 |
| VGS(th) (V) | 2.5 to 4.5 |
| Qg (nC) | 98 |
| Qgs (nC) | 57 |
| Qgd (nC) | 41 |
| PD (W) | 226 |
| SOA (Single Pulse) | Refer to datasheet |
| Body Diode VF (V) | 1.5 |
| Body Diode IF (A) | 60 |
| Operating Temperature | -55 to 150掳C |
| Storage Temperature | -55 to 150掳C |
Instructions:
- Handling Precautions: The RGTH60TS65GC11 is an electrostatic discharge (ESD) sensitive device. Handle with care and use proper ESD protection measures.
- Mounting: Ensure that the thermal interface material is applied evenly when mounting the device to a heatsink for optimal heat dissipation.
- Soldering: Follow recommended soldering profiles to avoid damage. Maximum soldering temperature should not exceed 260掳C for 10 seconds.
- Storage: Store in a dry, cool place away from direct sunlight and moisture.
- Applications: Suitable for high-frequency switching applications, motor control, power supplies, and industrial inverters.
- Datasheet Review: Always refer to the full datasheet for detailed specifications and safe operating area (SOA) information before designing circuits.
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