RGTH60TS65GC11

RGTH60TS65GC11


Specifications
Details

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Parameter Value
Part Number RGTH60TS65GC11
Type MOSFET
Package TO-247-3L
VDS (V) 650
RDS(on) (m惟) @ VGS=10V 60
ID (A) 60
VGS(th) (V) 2.5 to 4.5
Qg (nC) 98
Qgs (nC) 57
Qgd (nC) 41
PD (W) 226
SOA (Single Pulse) Refer to datasheet
Body Diode VF (V) 1.5
Body Diode IF (A) 60
Operating Temperature -55 to 150掳C
Storage Temperature -55 to 150掳C

Instructions:

  1. Handling Precautions: The RGTH60TS65GC11 is an electrostatic discharge (ESD) sensitive device. Handle with care and use proper ESD protection measures.
  2. Mounting: Ensure that the thermal interface material is applied evenly when mounting the device to a heatsink for optimal heat dissipation.
  3. Soldering: Follow recommended soldering profiles to avoid damage. Maximum soldering temperature should not exceed 260掳C for 10 seconds.
  4. Storage: Store in a dry, cool place away from direct sunlight and moisture.
  5. Applications: Suitable for high-frequency switching applications, motor control, power supplies, and industrial inverters.
  6. Datasheet Review: Always refer to the full datasheet for detailed specifications and safe operating area (SOA) information before designing circuits.
(For reference only)

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