Details

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BUY 2SD1264A https://www.utsource.net/itm/p/12608974.html

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage	VCEO	800	V
Collector-Base Voltage	VCBO	800	V
Emitter-Base Voltage	VEBO	7	V
Continuous Collector Current	ICM	15	A
Collector Dissipation	PCM	180	W
Junction Temperature	TJ	-55 to 150	掳C
Storage Temperature	TSTG	-65 to 150	掳C
Transition Frequency	fT	3.5	MHz
Maximum Power Gain	hFE	20 to 100	-

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Use insulated mounting hardware to avoid electrical shorts.

2. Biasing:

   • Apply base current (IB) carefully to avoid exceeding the maximum collector current (ICM).
   • Ensure the base-emitter voltage (VBE) does not exceed the rated value to prevent damage.

3. Operating Conditions:

   • Do not exceed the maximum collector-emitter voltage (VCEO) or collector-base voltage (VCBO).
   • Keep the junction temperature (TJ) within the specified range to ensure reliable operation.

4. Storage:

   • Store the device in a dry, cool place within the storage temperature range (TSTG).

5. Handling:

   • Handle with care to avoid mechanical damage.
   • Use appropriate ESD protection to prevent damage from static electricity.

6. Testing:

   • Test the device under controlled conditions to ensure it meets the specified parameters.
   • Refer to the datasheet for detailed testing procedures and recommended test circuits.

(For reference only)