Details

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BUY 2SC2632-R https://www.utsource.net/itm/p/12608990.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	60	V	IC = 150mA
Collector-Base Voltage	VCBO	-	-	60	V	IC = 0
Emitter-Base Voltage	VEBO	-5	-	-2.5	V	IE = 150mA
Collector Current	IC	-	150	-	mA	VCE = 30V
DC Current Gain	hFE	70	200	400	-	IC = 150mA, VCE = 10V
Transition Frequency	fT	-	200	-	MHz	IC = 10mA, VCE = 3V
Storage Temperature Range	Tstg	-55	-	150	掳C	-

Instructions for Use:

1. Mounting and Handling: Handle the 2SC2632-R with care to avoid damage to the leads or body. Use appropriate anti-static precautions.

2. Soldering: Ensure that the soldering temperature does not exceed 300掳C and the duration of soldering at this temperature should not be more than 10 seconds per lead.

3. Biasing: For optimal performance, bias the transistor according to the specified conditions in the parameter table. Pay particular attention to the collector-emitter voltage (VCEO) and collector current (IC).

4. Heat Sinking: If operating near maximum power dissipation, use an appropriate heat sink to maintain safe operating temperatures.

5. Storage: Store in a dry, cool place away from direct sunlight and sources of heat.

6. Testing: When testing the device, ensure that all voltages and currents are within the specified limits to prevent damage.

7. Application Circuits: Refer to application notes for specific circuit configurations and recommendations for using the 2SC2632-R in various applications.

(For reference only)