Details

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BUY 2N6490 https://www.utsource.net/itm/p/12609008.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	300	V	IC = 0, TJ = 25掳C
Emitter-Base Voltage	VEBO	-	-	15	V	IE = 0, TJ = 25掳C
Collector-Base Voltage	VCBO	-	-	300	V	IC = 0, TJ = 25掳C
Collector Current	IC	-	-	0.1	A	VCE = 300V, TJ = 25掳C
Base Current	IB	-	-	0.005	A	VCE = 300V, TJ = 25掳C
Power Dissipation	PT	-	-	1.8	W	TC = 25掳C
Junction Temperature	TJ	-	-	150	掳C	-
Storage Temperature	TSTG	-55	-	150	掳C	-
Transition Frequency	fT	-	10	-	MHz	IC = 1mA, VCE = 10V, TA = 25掳C

Instructions for Use:

1. Mounting and Handling:

   • Handle the 2N6490 with care to avoid mechanical damage.
   • Ensure proper heat sinking if operating near maximum power dissipation.

2. Biasing:

   • Use appropriate biasing circuits to ensure stable operation.
   • Ensure the base current is sufficient to drive the transistor into saturation when required.

3. Thermal Management:

   • Monitor the junction temperature to prevent overheating.
   • Use a heatsink if the power dissipation exceeds the safe operating limit for the package.

4. Storage:

   • Store the 2N6490 in a dry, cool environment to prevent moisture damage.
   • Avoid exposing the device to extreme temperatures outside the storage range.

5. Electrical Characteristics:

   • Ensure that all operating voltages and currents do not exceed the maximum ratings.
   • Use decoupling capacitors to filter out noise and stabilize the power supply.

6. Testing:

   • Use a multimeter or transistor tester to verify the functionality of the 2N6490 before installation.
   • Check for short circuits and open circuits in the connections.

7. Soldering:

   • Use a low-wattage soldering iron to avoid damaging the transistor.
   • Allow the device to cool down after soldering to prevent thermal shock.

(For reference only)