Details

---

BUY 65C1168E https://www.utsource.net/itm/p/12609014.html

Parameter	Description	Value/Range	Unit
Device Type	65C1168E is a CMOS static RAM with built-in refresh controller	-	-
Memory Capacity	Total memory storage capacity	64 K x 8	bits
Operating Voltage (Vcc)	Supply voltage range for operation	2.7 to 5.5	V
Standby Current	Current consumed in standby mode	10	渭A
Active Current	Current consumed during active operations	35	mA
Access Time	Time required to access data from the memory	55	ns
Refresh Cycle	Time interval for automatic refresh	64 ms
Temperature Range	Operating temperature range	-40 to +85	掳C
Package Type	Type of package	28-pin PDIP, SOIC

Instructions for Use:

1. Power Supply Connection:

   • Connect Vcc to the positive supply within the specified operating voltage range.
   • Connect GND to the system ground.

2. Memory Addressing:

   • Use the address lines A0-A15 to specify the memory location.
   • Data input/output is managed via D0-D7 lines.

3. Control Signals:

   • Apply control signals such as Chip Select (CS), Write Enable (WE), and Output Enable (OE) according to the timing diagrams provided in the datasheet.

4. Refresh Operation:

   • The device includes an internal refresh controller which automatically performs refresh cycles every 64ms, ensuring reliable data retention without external refresh circuitry.

5. Standby Mode:

   • To enter standby mode, set CS high and ensure WE and OE are also inactive. This minimizes power consumption.

6. Handling Precautions:

   • Handle the device with care to avoid electrostatic discharge (ESD) damage.
   • Ensure that all connections are secure and correct to prevent damage to the device.

7. Storage Conditions:

   • Store in a dry environment within the non-operating temperature range to maintain reliability.

For detailed specifications and advanced configurations, refer to the official datasheet provided by the manufacturer.

(For reference only)