Details

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BUY 2SB795-AZ/JM https://www.utsource.net/itm/p/12609017.html

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage	VCE	300	V
Emitter-Base Voltage	VEB	5	V
Collector Current	IC	15	A
Base Current	IB	1.5	A
Power Dissipation	PT	120	W
Operating Junction Temperature	TJ	-55 to +150	掳C
Storage Temperature	TS	-65 to +150	掳C
Transition Frequency	fT	10	MHz

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain operating junction temperature within specified limits.
   • Use recommended mounting torque for screws to avoid damage to the transistor.

2. Biasing:

   • Set the base current (I_B) to ensure the transistor operates in the desired region (saturation, active, or cutoff).
   • Avoid excessive base current which can lead to thermal runaway.

3. Power Dissipation:

   • Monitor power dissipation to prevent overheating. Use a heatsink if necessary to keep the junction temperature below the maximum limit.
   • Ensure adequate ventilation and cooling, especially in high-power applications.

4. Voltage Ratings:

   • Do not exceed the maximum collector-emitter voltage (V_CE) or emitter-base voltage (V_EB).
   • Protect the transistor from voltage spikes using clamping diodes or other protective circuits.

5. Storage:

   • Store the transistor in a dry, cool environment to prevent moisture damage.
   • Handle with care to avoid mechanical stress, which can affect performance.

6. Testing:

   • Use appropriate test equipment and procedures to avoid damaging the transistor during testing.
   • Follow safety guidelines to protect against electrical hazards.

7. Soldering:

   • Preheat the transistor to reduce thermal shock during soldering.
   • Use a low-temperature soldering iron and complete the soldering process quickly to minimize heat exposure.

8. Handling:

   • Use static-protective equipment to prevent damage from electrostatic discharge (ESD).
   • Handle the transistor by the body, not the leads, to avoid mechanical stress.

(For reference only)