Details

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BUY T2550H-600T https://www.utsource.net/itm/p/12609052.html

Parameter	Specifications
Part Number	T2550H-600T
Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Configuration	N-Channel
Voltage - Drain to Source (Vds)	600 V
Continuous Drain Current (Id) at 25掳C	25 A
Power Dissipation (Pd)	140 W
Gate Charge (Qg)	75 nC
Input Capacitance (Ciss)	3900 pF
Output Capacitance (Coss)	350 pF
Turn-off Time (t(off))	85 ns
Package Type	TO-247
Operating Temperature	-55掳C to +150掳C

Instructions:

1. Handling and Storage:

   • Store in a dry, cool place.
   • Handle with care to avoid damage to the leads or body.

2. Mounting:

   • Ensure proper heat sinking for optimal performance, especially when operating near maximum current levels.
   • Use recommended mounting torque for screws to prevent damage to the package.

3. Electrical Connections:

   • Connect the drain, source, and gate terminals correctly according to your circuit design.
   • Ensure all connections are secure and free from shorts.

4. Operation:

   • Do not exceed the maximum ratings specified in the table to avoid damaging the device.
   • Keep within the operating temperature range to ensure reliable operation.

5. Testing:

   • When testing, use appropriate safety measures and equipment to protect against high voltages and currents.

(For reference only)