Details

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BUY FQPF85N06 https://www.utsource.net/itm/p/12609066.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	60	-	V	-
Gate-Source Voltage	VGS	-15	-	15	V	-
Continuous Drain Current	ID	-	85	-	A	TC = 25°C
Continuous Drain Current	ID	-	57	-	A	TC = 100°C
Pulse Drain Current	IDM	-	340	-	A	tp = 10 μs, IG = 10 A
Total Power Dissipation	PTOT	-	120	-	W	TC = 25°C
Junction Temperature	TJ	-	-	175	°C	-
Storage Temperature Range	TSTG	-55	-	150	°C	-
Gate Charge	QG	-	140	-	nC	-
Input Capacitance	Ciss	-	1690	-	pF	VDS = 15 V, f = 1 MHz
Output Capacitance	Coss	-	112	-	pF	VDS = 15 V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	23.5	-	pF	VDS = 15 V, f = 1 MHz

Instructions for Use:

1. Voltage Ratings:

   • Ensure that the drain-source voltage (V_DS) does not exceed 60V.
   • The gate-source voltage (V_GS) should be within the range of -15V to +15V.

2. Current Handling:

   • The continuous drain current (I_D) is 85A at a case temperature (T_C) of 25°C and reduces to 57A at 100°C.
   • For pulse applications, the peak drain current (I_DM) can reach up to 340A for a pulse duration of 10 μs with a gate current (I_G) of 10A.

3. Power Dissipation:

   • The total power dissipation (P_TOT) is 120W at a case temperature of 25°C. Proper heat sinking is required to manage power dissipation at higher temperatures.

4. Temperature Limits:

   • The maximum junction temperature (T_J) is 175°C. Ensure adequate cooling to prevent overheating.
   • The storage temperature range (T_STG) is from -55°C to 150°C. Store the device in a controlled environment to avoid damage.

5. Capacitance and Charge:

   • The input capacitance (C_iss) is 1690 pF, the output capacitance (C_oss) is 112 pF, and the reverse transfer capacitance (C_rss) is 23.5 pF. These values are measured at V_DS = 15V and f = 1 MHz.
   • The gate charge (Q_G) is 140 nC, which affects switching performance and drive requirements.

6. Mounting and Handling:

   • Use appropriate mounting techniques to ensure good thermal contact and mechanical stability.
   • Handle the device with care to avoid static discharge, which can damage the gate oxide.

7. Testing and Operation:

   • Before using the device, verify all connections and ensure that the power supply and control signals are within the specified limits.
   • Monitor the device’s temperature during operation to ensure it remains within safe operating limits.

(For reference only)