2SC4814

2SC4814


Specifications
SKU
12609072
Details

BUY 2SC4814 https://www.utsource.net/itm/p/12609072.html

Parameter Symbol Min Typical Max Unit
Collector-Emitter Voltage VCE - - 60 V
Base-Emitter Voltage VBE - 0.7 - V
Collector Current IC - 500 - mA
Base Current IB - - 100 mA
Power Dissipation PT - - 625 mW
Transition Frequency fT - 300 - MHz
Storage Temperature TSTG -55 - 150 掳C
Operating Temperature TA -55 - 150 掳C

Instructions for Use:

  1. Mounting and Handling:

    • Handle the 2SC4814 with care to avoid damage to the leads and the semiconductor junction.
    • Ensure that the device is mounted on a suitable heat sink if high power dissipation is expected.
  2. Biasing:

    • Apply the base-emitter voltage (VBE) within the specified range to ensure proper operation.
    • The collector current (IC) should not exceed the maximum rating to prevent overheating and potential damage.
  3. Power Dissipation:

    • Monitor the power dissipation (PT) to ensure it does not exceed the maximum allowable value. Use appropriate heat sinking if necessary.
  4. Temperature Range:

    • Operate the device within the specified temperature range (TA) to ensure reliable performance.
    • Store the device within the storage temperature range (TSTG) to prevent degradation.
  5. Frequency Considerations:

    • The transition frequency (fT) indicates the maximum frequency at which the transistor can operate effectively. Design circuits considering this parameter for optimal performance.
  6. Electrostatic Discharge (ESD) Protection:

    • Handle the 2SC4814 with ESD precautions to avoid damaging the sensitive semiconductor junctions. Use grounded wrist straps and ESD-safe work surfaces.
  7. Soldering:

    • Solder the leads quickly and avoid excessive heat, as prolonged exposure to high temperatures can damage the device.
    • Follow recommended soldering profiles provided by the manufacturer to ensure reliable connections.
  8. Testing:

    • Test the device under controlled conditions to verify its parameters before integrating it into the final application.
    • Use appropriate test equipment and methods to avoid overstressing the device during testing.
(For reference only)

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