Details

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BUY 2SC1953 https://www.utsource.net/itm/p/12609150.html

Parameter	Symbol	Min	Typ	Max	Unit	Condition
Collector-Emitter Voltage	VCEO	-	-	60	V	IC = 150 mA
Emitter-Base Voltage	VEBO	-	-	6	V	IEBO = 5 mA
Collector Current	IC	-	-	150	mA	VCE = 30 V
Base Current	IB	-	-	15	mA	VCE = 30 V
DC Current Gain	hFE	40	100	300	-	IC = 150 mA, VCE = 10 V
Transition Frequency	fT	-	-	100	MHz	IC = 10 mA, VCE = 10 V
Storage Temperature Range	TSTG	-55	-	150	掳C	-
Operating Temperature Range	TA	-55	-	150	掳C	-

Instructions for Use:

1. Handling Precautions:

   • Avoid exposing the transistor to excessive static electricity.
   • Handle the device with care to prevent mechanical damage.

2. Mounting:

   • Ensure proper alignment of the leads during soldering.
   • Use a heat sink if operating at high power levels to maintain junction temperature within safe limits.

3. Biasing:

   • Ensure that the base-emitter voltage (V_BE) is within the specified range to avoid damage.
   • Use appropriate biasing circuits to maintain stable operation.

4. Power Dissipation:

   • Calculate the power dissipation (P_D) to ensure it does not exceed the maximum rating.
   • Use a heatsink if necessary to keep the junction temperature below the maximum limit.

5. Storage:

   • Store the device in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the device in its original packaging until ready for use to protect against moisture and static discharge.

6. Testing:

   • Use a multimeter or transistor tester to verify the functionality of the device before installation.
   • Test the device under typical operating conditions to ensure it meets the required specifications.

(For reference only)