AT27C256R 15JC

AT27C256R 15JC


Specifications
Details

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Parameter Description Value
Device Type EEPROM (Electrically Erasable Programmable Read-Only Memory) AT27C256R
Manufacturer Microchip Technology
Package Type 28-Pin PDIP (Plastic Dual Inline Package)
Operating Voltage (Vcc) Supply Voltage for Operation 4.5V to 5.5V
Memory Capacity Total Number of Bits 262,144 bits
Organization Data Organization 32K x 8
Access Time (tAA) Access Time 150ns
Page Mode Page Mode Access Not Supported
Programming Voltage (Vpp) Programming Voltage for Writing Data 12.5V 卤 0.5V
Endurance Write/Erase Cycles 1,000,000 cycles
Data Retention Duration Data is Retained 10 years
Temperature Range Operating Temperature -40掳C to +85掳C
Standby Current (ISB) Current in Standby Mode 10渭A max
Active Current (ICC) Current During Active Operation 20mA max

Instructions for Use:

  1. Power Supply: Ensure the device is powered within the specified operating voltage range of 4.5V to 5.5V.
  2. Programming Voltage: Apply the programming voltage (Vpp) of 12.5V 卤 0.5V only during write operations.
  3. Addressing: Address lines must be stable during read and write operations to ensure correct data access.
  4. Write Operations: Before writing new data, ensure the memory location is erased. Each sector can endure up to 1,000,000 write/erase cycles.
  5. Read Operations: Access time is 150ns; ensure that your system timing accounts for this delay.
  6. Temperature Considerations: Operate the device within the temperature range of -40掳C to +85掳C to maintain reliability.
  7. Handling Precautions: Handle with care to avoid damage from electrostatic discharge (ESD).
(For reference only)

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