Details
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| Parameter | Description | Value |
|---|---|---|
| Device Type | EEPROM (Electrically Erasable Programmable Read-Only Memory) | AT27C256R |
| Manufacturer | Microchip Technology | |
| Package Type | 28-Pin PDIP (Plastic Dual Inline Package) | |
| Operating Voltage (Vcc) | Supply Voltage for Operation | 4.5V to 5.5V |
| Memory Capacity | Total Number of Bits | 262,144 bits |
| Organization | Data Organization | 32K x 8 |
| Access Time (tAA) | Access Time | 150ns |
| Page Mode | Page Mode Access | Not Supported |
| Programming Voltage (Vpp) | Programming Voltage for Writing Data | 12.5V 卤 0.5V |
| Endurance | Write/Erase Cycles | 1,000,000 cycles |
| Data Retention | Duration Data is Retained | 10 years |
| Temperature Range | Operating Temperature | -40掳C to +85掳C |
| Standby Current (ISB) | Current in Standby Mode | 10渭A max |
| Active Current (ICC) | Current During Active Operation | 20mA max |
Instructions for Use:
- Power Supply: Ensure the device is powered within the specified operating voltage range of 4.5V to 5.5V.
- Programming Voltage: Apply the programming voltage (Vpp) of 12.5V 卤 0.5V only during write operations.
- Addressing: Address lines must be stable during read and write operations to ensure correct data access.
- Write Operations: Before writing new data, ensure the memory location is erased. Each sector can endure up to 1,000,000 write/erase cycles.
- Read Operations: Access time is 150ns; ensure that your system timing accounts for this delay.
- Temperature Considerations: Operate the device within the temperature range of -40掳C to +85掳C to maintain reliability.
- Handling Precautions: Handle with care to avoid damage from electrostatic discharge (ESD).
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